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High-Efficiency P-I-N Microcrystalline and Micromorph Thin Film Silicon Solar Cells Deposited on LPCVD Zno Coated Glass Substrates

机译:在LPCVD Zno涂层玻璃基板上沉积的高效P-I-N微晶和微晶薄膜硅太阳能电池

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摘要

The authors report on the fabrication of microcrystalline silicon p-i-n solar cells with efficiencies close to 10%, using glass coated with zinc oxide (ZnO) deposited by low pressure chemical vapor deposition (LPCVD). LPCVD front contacts were optimized for p-i-n microcrystalline silicon solar cells by decreasing the free carrier absorption of the layers and increasing the surface roughness. These modifications resulted in an increased current density of the solar cell but also in significantly reduced fill-factor (FF) and open-circuit voltage (V). In order to avoid these reductions, a new surface treatment of the ZnO is introduced. It transforms profoundly the surface morphology by turning the typical V-shaped valleys of the LPCVD ZnO into U-shaped valleys and by erasing from the surface small-sized pyramids and asperities. As a result, for fixed deposition parameters, the p-i-n microcrystalline silicon solar cell efficiency increased from 3.3% to 9.2%. Further optimization of the microcrystalline silicon solar cell on this 'new' type of LPCVD ZnO front contact has led to an efficiency of 9.9%.
机译:作者报告了使用通过低压化学气相沉积(LPCVD)沉积的氧化锌(ZnO)涂层的玻璃制造效率接近10%的微晶硅p-i-n太阳能电池的方法。通过减少各层的自由载流子吸收并增加表面粗糙度,针对p-i-n微晶硅太阳能电池优化了LPCVD前触点。这些修改导致太阳能电池的电流密度增加,但填充因子(FF)和开路电压(V)也大大降低。为了避免这些减少,引入了新的ZnO表面处理。通过将LPCVD ZnO的典型V形谷变成U形谷并从表面擦除小尺寸的金字塔和凹凸,它可以深刻地改变表面形态。结果,对于固定的沉积参数,p-i-n微晶硅太阳能电池效率从3.3%增加到9.2%。在这种“新型” LPCVD ZnO前触点上对微晶硅太阳能电池的进一步优化已使效率提高到9.9%。

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